Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer
SCIE
SCOPUS
- Title
- Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer
- Authors
- Xi, YA; Chen, KX; Mont, F; Kim, JK; Schubert, EF; Liu, W; Li, X; Smart, JA
- Date Issued
- 2007-02-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Si-doped Al0.3Ga0.7N grown on (0 0 0 I)-oriented sapphire is optimized by using a superlattice (SL) layer. Atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), secondary ion mass spectrometry (SIMS), and Hall effect measurements show that n-type Al0.3Ga0.7N grown on a SL layer gives high-quality crystalline and electrical properties. A 1.8-mu m-thick crack-free n-type Al0.3Ga0.7N layer is demonstrated with a doping concentration of 3 x 1018CM-3, an excellent mobility of 80 cm(2)/(V s), and an RMS roughness of 0.40 nm. Using the SL layer also results in the absence of hexagonal hillocks on the AlGaN surface, which are indicative of a high defect density. The study of an identical n-type Al0.3Ga0.7N layer grown on a low-temperature AIN interlayer shows a lower carrier concentration, mobility, and crystalline quality. (c) 2006 Elsevier B.V. All rights reserved.
- Keywords
- metalorganic vapor phase epitaxy; AlGaN; nitride; light emitting diode; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28186
- DOI
- 10.1016/J.JCRYSGRO.2006.10.253
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 299, no. 1, page. 59 - 62, 2007-02-01
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