The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN
SCIE
SCOPUS
KCI
- Title
- The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN
- Authors
- Kim, JK; Cho, YH; Kwak, JS; Nam, OH; Lee, J; Park, Y; Kim, T; Kim, JW; Lee, JL
- Date Issued
- 2001-07
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- Thermal stabilities of Pt and Pt/Au ohmic contacts on p-type GaN were studied through high temperature thermal stress test at 550 degreesC. The long-term thermal stability of the contact resistivity for the Pt/Au contact was better than that for the Pt contat oil p-type GaN. Considering the Free energy change for the formation of nitrogen and gallium molecules, the outdiffusion of N atoms continuously proceeded, but that of Ga atoms was suppressed during the thermal stress for the Pt contacts. Thus. N vacancies, act as donor for electrons, were produced below the contact leading to rapid increase of contact resistivity during the thermal stress. For the Pt/Au contact, Ga atoms outdiffused through grain boundaries of Pt and dissolved to the Au overlayer producing a number of Vi:, at subsurface of p-type GaN below the contact, resulting in the increase of net hole concentration below the Pt/Au contact. Thus: the contact resistivity was not increased further under long-time thermal stress.
- Keywords
- N-TYPE GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28163
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 39, no. 1, page. 23 - 27, 2001-07
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.