Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

MONOLITHIC SERIAL INGAAS-GAAS-ALGAAS LASER-DIODE ARRAYS SCIE SCOPUS

Title
MONOLITHIC SERIAL INGAAS-GAAS-ALGAAS LASER-DIODE ARRAYS
Authors
HAN, HHOLEHOUSE, NFORBES, DVCOLEMAN, JJ
Date Issued
1994-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (lambda approximately 0.93 mum) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply limited) per uncoated facet under pulsed conditions (1.5 kHz, 2 mus). The threshold current is approximately 0.5 A, and the peak slope efficiency and the peak electrical-to-optical conversion efficiency of an individual laser element are approximately 0.53 W/A and 14%, respectively. The near-field intensity distribution is shown to be broad enough to fill the entire active region under the p-metal stripe (125 mum) of the individual laser diodes at high current levels.
URI
https://oasis.postech.ac.kr/handle/2014.oak/28111
DOI
10.1109/68.324668
ISSN
1041-1135
Article Type
Article
Citation
IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 6, no. 9, page. 1059 - 1061, 1994-09
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

한해욱HAN, HAEWOOK
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse