MONOLITHIC SERIAL INGAAS-GAAS-ALGAAS LASER-DIODE ARRAYS
SCIE
SCOPUS
- Title
- MONOLITHIC SERIAL INGAAS-GAAS-ALGAAS LASER-DIODE ARRAYS
- Authors
- HAN, H; HOLEHOUSE, N; FORBES, DV; COLEMAN, JJ
- Date Issued
- 1994-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- Top-contact monolithic serially-biased InGaAs-GaAs-AlGaAs (lambda approximately 0.93 mum) broad area strained-layer quantum well laser arrays have been fabricated on a semi-insulating GaAs substrate. The laser array consists of four individual laser diodes and operates up to 2.8 W at 3.6 A (supply limited) per uncoated facet under pulsed conditions (1.5 kHz, 2 mus). The threshold current is approximately 0.5 A, and the peak slope efficiency and the peak electrical-to-optical conversion efficiency of an individual laser element are approximately 0.53 W/A and 14%, respectively. The near-field intensity distribution is shown to be broad enough to fill the entire active region under the p-metal stripe (125 mum) of the individual laser diodes at high current levels.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28111
- DOI
- 10.1109/68.324668
- ISSN
- 1041-1135
- Article Type
- Article
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 6, no. 9, page. 1059 - 1061, 1994-09
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