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A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology SCIE SCOPUS

Title
A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology
Authors
Lee, YSLee, MWKam, SHJeong, YH
Date Issued
2009-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Abstract
A high efficiency, GaN based power amplifier (PA) employing the inverse class-E topology is reported. The parasitic inductance and large output capacitance of the packaged active device are used as the series inductance and compensated by a shunt inductor, respectively. The composite right/left-handed transmission line is used as a harmonic control network. For the experimental validation, an inverse class-E PA is designed using a GaN HEMT and tested with a continuous wave at 1 GHz. From the measured results, the drain efficiency and power-added efficiency (PAE) of 79.7% and 78.8% with a gain of 19.03 dB is achieved at an output power of 41.03 dBm. Also, the inverse class-E PA can deliver the output power and PAE of over 40.8 dBm and 65% through the bandwidth of 100 MHz.
Keywords
Composite right/left-handed transmission line (CRLH-TL); efficiency; GaN HEMT; harmonic; inverse class-E power amplifier (PA); WCDMA APPLICATIONS; DOHERTY AMPLIFIER; MICROWAVE
URI
https://oasis.postech.ac.kr/handle/2014.oak/28053
DOI
10.1109/LMWC.2009.2027095
ISSN
1531-1309
Article Type
Article
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 19, no. 9, page. 593 - 595, 2009-09
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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