A. 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor
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- Title
- A. 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor
- Authors
- Sim, JY; Yoon, H; Chun, KC; Lee, HS; Hong, SP; Lee, KC; Yoo, JH; Seo, DI; Cho, SI
- Date Issued
- 2003-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-mum technology. To achieve an ideal 33% efficiency,, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than 2.5 degreesC.
- Keywords
- charge pump; DRAM; sense amplifier; temperature sensor; CIRCUITS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27958
- DOI
- 10.1109/JSSC.2003.809514
- ISSN
- 0018-9200
- Article Type
- Article
- Citation
- IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 38, no. 4, page. 631 - 640, 2003-04
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