Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies
- Title
- Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies
- Authors
- Bozanic, A; Majlinger, Z; Petravic, M; Gao, Q; Llewellyn, D; Crotti, C; Yang, YW; Kim, KJ; Kim, B; null
- Date Issued
- 2009-08
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N(2), in all samples under consideration. The presence of N(2) produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic vibrational fine structure in high-resolution measurements. At the same time, a new peak, shifted towards higher binding energies, emerges in all N 1s photoemission spectra. We have found a shift of 7.6 eV for In-based compounds and 6.7 eV for Ga-based compounds. Our results demonstrate that NEXAFS and core-level XPS are complementary techniques that form a powerful combination for studying molecular nitrogen in compound semiconductors, such as GaSb, InSb, GaAs, InN, GaN or ZnO. (C) 2009 Elsevier Ltd. All rights reserved.
- Keywords
- XPS; NEXAFS; Semiconductors; Molecular nitrogen; CORE-LEVEL PHOTOEMISSION; HIGH-RESOLUTION; FINE-STRUCTURE; ENERGY; SURFACES; NITRIDATION; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27852
- DOI
- 10.1016/J.VACUUM.2009.04.020
- ISSN
- 0042-207X
- Article Type
- Conference
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.