NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces
- Title
- NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces
- Authors
- Majlinger, Z; Bozanic, A; Petravic, M; Kim, KJ; Kim, B; Yang, YW; null
- Date Issued
- 2009-08
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- interaction of low-energy nitrogen ions (0.3-2 keV N(2)(+)) with GaAs (100) surfaces has been studied by Xray photoemission spectroscopy (XPS) around N 1s and Ga 3d core-levels and near-edge X-ray absorption fine structure (NEXAFS) around the N K-edge, using synchrotron radiation. At the lowest bombardment energy, nitrogen forms bonds with both Ga and As, while Ga-N bonds form preferentially at higher energies. Thermal annealing at temperatures above 350 degrees C promotes formation of GaN on the surface, but it is insufficient to remove disorder introduced by ion implantation. We have identified nitrogen interstitials and anti-sites in NEXAFS spectra, while interstitial molecular nitrogen provides a clear signature in both XPS and NEXAFS. The close similarity between NEWS spectra from thin GaN films and ion-bombarded GaAs samples supports our proposition about formation of thin GaN films on ion-bombarded GaAs. (C) 2009 Published by Elsevier Ltd.
- Keywords
- NEXAFS; XPS; Semiconductors; GaN; GaAs; Nitrogen defects; ABSORPTION FINE-STRUCTURE; BV SEMICONDUCTOR SURFACES; COMPOUND SEMICONDUCTORS; MOLECULAR NITROGEN; BEAM NITRIDATION; NATIVE DEFECTS; THIN-FILMS; SPECTROSCOPY; ENERGY; PHOTOEMISSION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27851
- DOI
- 10.1016/J.VACUUM.2009.04.024
- ISSN
- 0042-207X
- Article Type
- Conference
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- There are no files associated with this item.
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