Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating
SCIE
SCOPUS
- Title
- Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating
- Authors
- Yang, C; Hong, K; Jang, J; Chung, DS; An, TK; Choi, WS; Park, CE
- Date Issued
- 2009-11-18
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [ 002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm(2) V-1 s(-1), which was higher by a factor of similar to 8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.
- Keywords
- FIELD-EFFECT TRANSISTORS; MOBILITY; ROUGHNESS; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27717
- DOI
- 10.1088/0957-4484/20/46/465201
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 20, no. 46, page. 465201, 2009-11-18
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