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Electronic structure of amorphous InGaO3(ZnO)(0.5) thin films

Title
Electronic structure of amorphous InGaO3(ZnO)(0.5) thin films
Authors
Cho, DYSong, JHwang, CSChoi, WSNoh, TWKim, JYLee, HGPark, BGCho, SYOh, SJJeong, JHJeong, JKMo, YGnull
Date Issued
Dec-2009
Publisher
ELSEVIER SCIENCE SA
Abstract
The electronic structure of amorphous semiconductor InGaO3(ZnO)(0.5) thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure. (C) 2009 Elsevier B.V. All rights reserved.
Keywords
InGaZnO; Transparent conducting oxide; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; TFTS
URI
http://oasis.postech.ac.kr/handle/2014.oak/27687
DOI
10.1016/J.TSF.2009.01.156
ISSN
0040-6090
Article Type
PROCEEDINGS PAPER
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