Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties
SCIE
SCOPUS
- Title
- Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties
- Authors
- Hahm, SG; Choi, S; Hong, SH; Lee, TJ; Park, S; Kim, DM; Kim, JC; Kwon, W; Kim, K; Kim, MJ; Kim, O; Ree, M
- Date Issued
- 2009-01
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3'-bis(diphenylcarbamyloxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conventional solution coating process. The devices were found to exhibit programmable, rewritable nonvolatile memory characteristics with a high ON/OFF current ratio of up to 10(9), a long retention time in both ON and OFF states, and low power consumption. Moreover, the active 6F-HAB-DPC PI layer is thermally and dimensionally stable and thus hybridization with a complementary metal-oxide-semiconductor platform is feasible. The advantageous properties and ease of fabrication of the 6F-HAB-DPC PI based devices open up the possibility of the mass production of high performance digital nonvolatile polymer memory devices at low cost.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27559
- DOI
- 10.1039/B814470M
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 19, no. 15, page. 2207 - 2214, 2009-01
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