The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes
SCIE
SCOPUS
- Title
- The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes
- Authors
- Jang, HW; Ryu, SW; Yu, HK; Lee, S; Lee, JL
- Date Issued
- 2010-01-15
- Publisher
- IOP PUBLISHING LTD
- Abstract
- We report effective methods for improving light extraction efficiency for n-side-up vertical InGaN light-emitting diodes (LEDs). For the LEDs with high reflectance Ag-based p-contacts, nanotexturing of the n-GaN surface using a combination of photonic crystals and photochemical etching drastically enhances the efficiency of extraction from the top surface. In contrast, the LEDs with low reflectance Au-based p-contacts show significantly less improvement through the nanotexturing. These experimental results indicate the critical role of high reflectance p-contacts as well as surface texturing in improving the light extraction efficiency of the vertical LEDs for solid-state lighting.
- Keywords
- PHOTONIC-CRYSTAL; GAN; EFFICIENCY; SUBSTRATE; BLUE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27536
- DOI
- 10.1088/0957-4484/21/2/025203
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 21, no. 2, page. 25203 - 25203, 2010-01-15
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