Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal
SCIE
SCOPUS
- Title
- Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal
- Authors
- Jin, S; Kwon, M; Moon, K; Park, B; Kim, B
- Date Issued
- 2013-10
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-mu m RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR(E-UTRA) of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27138
- DOI
- 10.1109/TMTT.2013.2280116
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 61, no. 10, page. 3753 - 3762, 2013-10
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