Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices
SCIE
SCOPUS
- Title
- Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices
- Authors
- Kwon, KC; Kim, C; Le, QV; Gim, S; Jeon, JM; Ham, JY; Lee, JL; Jang, HW; Kim, SY
- Date Issued
- 2015-04
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Metal sulfides (MeS2) such as MoS2 and WS2 were used as charge transport layers in organic light-emitting diodes (OLEDs) and organic photovoltaic (OPV) cells in-order to enhance the stability in air comparing to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). MeS2 layers with a polycrystalline structure were synthesized by a chemical deposition method using uniformly spin-coated (NH4)MoS4,and (NH4)WS4 precursor solutions. The ultraviolet-ozone (UV-O-3) treatment on MeS2 leads to the removal of the surface contaminants produced by the transfer process, resulting in a uniform surface and an increase of the work function. The maximum luminance efficiencies of the OLEDs with UV-O-3-treated MoS2 and WS2 were 9.44 and 10.82 cd/A, respectively. The power conversion efficiencies of OPV cells based on UV-O-3-treated MoS2 and WS2 were 2.96 and 3.08%, respectively. These values correspond to-over 95% of those obtained with (PEDOT:PSS) based devices. Furthermore, OLEDs and OPV cells based on MeS2 showed two to six times longer stability in air compared with PEDOT:PSS based devices. These results suggest that UV-O-3-surface-treated MeS2 could be a promising candidate for a charge transport layer in optoelectronic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27042
- DOI
- 10.1021/ACSNANO.5B01504
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 9, no. 4, page. 4146 - 4155, 2015-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.