Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors
SCIE
SCOPUS
- Title
- Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors
- Authors
- Kim, J; Jang, M; An, TK; Kim, S; Kim, H; Kim, SH; Yang, H; Park, CE
- Date Issued
- 2015-02
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The electrical performance of triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled by grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene (PS-Si(CH3)(2)Cl) to 300-nm-thick SiO2 dielectrics. On the untreated and treated SiO2 dielectrics, solvent-vapor annealed TES-ADT films contained millimeter-sized crystals with low grain boundaries (GBs). The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly increased with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances (10.5-11 nF cm(-2)) and surface roughnesses (0.40-0.44 nm), the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites and therefore the OFET produced using it had low-voltage operation and a charge-carrier mobility similar to 1.32 cm(2) V (-1) s (-1), on-off current ratio > 10(6), threshold voltage similar to 0 V, and long-term operation stability under negative bias stress. (C) 2014 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26975
- DOI
- 10.1016/J.ORGEL.2014.11.022
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 17, page. 87 - 93, 2015-02
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- There are no files associated with this item.
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