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Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt

Title
Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt
Authors
Lee, HBRKim, JKim, HKim, WHLee, JWHwang, Inull
Date Issued
Jan-2010
Publisher
KOREAN PHYSICAL SOC
Abstract
The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were developed by using Co(iPr-AMD)(2) (bis (N,N'-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma-enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Go films with resistivities as low as 50 mu Omega cm. For PE-ALD, however, no selective deposition was achieved due to a degradation of the OTS hydrophobicity caused by the NH3 plasma exposure. The effects of the plasma on the blocking efficiency of SAM were studied.
Keywords
Atomic layer deposition; Cobalt; Area-selective deposition; Self-assembled monolayer; SELF-ASSEMBLED MONOLAYERS; THIN-FILMS; METAL; KINETICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/26594
DOI
10.3938/JKPS.56.104
ISSN
0374-4884
Article Type
ARTICLE
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