Collision-Induced Dissociation of II-VI Semiconductor Nanocrystal Precursors, Cd2+ and Zn2+ Complexes with Trioctylphosphine Oxide, Sulfide, and Selenide
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- Title
- Collision-Induced Dissociation of II-VI Semiconductor Nanocrystal Precursors, Cd2+ and Zn2+ Complexes with Trioctylphosphine Oxide, Sulfide, and Selenide
- Authors
- Min, WJ; Jung, S; Lim, SJ; Kim, Y; Shin, SK
- Date Issued
- 2009-09-03
- Publisher
- AMER CHEMICAL SOC
- Abstract
- The metal (M = Cd2+ and Zn2+) complexes with trioctylphosphine chalcogenide (TOPE, E = O, S, and Se) are prepared by electrospray ionization, and their relative stabilities and intramolecular reactions are studied by collision-induced dissociation (CID) with Xe under single collision conditions. These metal-TOPE complexes are considered as molecular precursors for the colloidal synthesis of H-VI compound semiconductor nanocrystals employing TOPO as a metal-coordinating solvent and TOPS or TOPSe as a chalcogen precursor. Of the various [M + nTOPE](2+) (n = 2-7) ions generated by EST, the n = 2-4 complexes are characterized by CID as a function of collision energy. The collision energy at 50% dissociation (E-50%) is determined from the cracking curve and the relative stabilities of the complexes are established. Between the two metal ions, the zinc-TOPE complexes are more stable than the cadmium-TOPE complexes when n = 2-3, whereas their stabilities are reversed when n = 4. Of the TOPE, TOPO binds most strongly to the metal ion, while TOPSe does most weakly. Upon CID, loss of TOPE occurs exclusively from the tetra-TOPE complexes, while extensive fragmentation of TOPE takes place from the di-TOPE complexes, showing the signature of the metal chacogenide formation. The nucleation of nanocrystals appears to begin with cracking of [M + 2TOPE](2+) (E = S and Se).
- Keywords
- CDSE/CDS CORE/SHELL NANOCRYSTALS; IONIZATION MASS-SPECTROMETRY; CORE-SHELL NANOCRYSTALS; ELECTROSPRAY-IONIZATION; QUANTUM DOTS; CDTE NANOCRYSTALS; ION-TRAP; LUMINESCENCE; STABILITY; ZINC
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26537
- DOI
- 10.1021/JP905153V
- ISSN
- 1089-5639
- Article Type
- Article
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY A, vol. 113, no. 35, page. 9588 - 9594, 2009-09-03
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