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Cited 11 time in webofscience Cited 12 time in scopus
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Interface roughness effect between gate oxide and metal gate on dielectric property

Title
Interface roughness effect between gate oxide and metal gate on dielectric property
Authors
Son, JYMaeng, WJKim, WHShin, YHKim, H
POSTECH Authors
Kim, H
Date Issued
May-2009
Publisher
ELSEVIER SCIENCE SA
Keywords
Interface roughness; Gate oxide; Metal gate; HfO(2); Ru; ATOMIC-LAYER DEPOSITION; TECHNOLOGY; CAPACITANCE; CMOS
URI
http://oasis.postech.ac.kr/handle/2014.oak/26496
DOI
10.1016/J.TSF.2009.01.117
ISSN
0040-6090
Article Type
Article
Citation
THIN SOLID FILMS, vol. 517, no. 14, page. 3892 - 3895, 2009-05
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김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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