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Interface roughness effect between gate oxide and metal gate on dielectric property
- Title
- Interface roughness effect between gate oxide and metal gate on dielectric property
- POSTECH Authors
- Kim, H
- Date Issued
- May-2009
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Interface roughness; Gate oxide; Metal gate; HfO(2); Ru; ATOMIC-LAYER DEPOSITION; TECHNOLOGY; CAPACITANCE; CMOS
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- THIN SOLID FILMS, vol. 517, no. 14, page. 3892 - 3895, 2009-05
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Related Researcher
- 김형준KIM, HYUNGJUN
- Dept of Materials Science & Enginrg