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Magnetoresistance in Fe and Cu co-doped ZnO thin films SCIE SCOPUS

Title
Magnetoresistance in Fe and Cu co-doped ZnO thin films
Authors
Yang, CHLee, HJKim, YBHan, SJeong, YHBirge, NO
Date Issued
2006-08-15
Publisher
ELSEVIER SCIENCE BV
Abstract
We examined magnetoresistance (MR) effects of Fe and Cu co-doped ZnO epitaxial films synthesized by pulsed laser deposition. The film exhibits a large positive MR at low temperatures (similar to 32.5% at 4 T and 10 K), but negative MR takes over above 40 K. This crossover behavior is in contrast with the case of pure ZnO with only negative MR. The MR effects of Fe and Cu co-doped ZnO epitaxial films imply that at least two different scattering mechanisms are operating in the electrical conduction. (c) 2006 Elsevier B.V. All rights reserved.
Keywords
positive magnetoresistance; dilute magnetic semiconductor; ZnO
URI
https://oasis.postech.ac.kr/handle/2014.oak/26372
DOI
10.1016/j.physb.2006.03.042
ISSN
0921-4526
Article Type
Article
Citation
PHYSICA B-CONDENSED MATTER, vol. 383, no. 1, page. 28 - 30, 2006-08-15
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