Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films

Abstract

This paper describes the fabrication and electric characteristics of nonvolatile memory devices from a poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) thin film sandwiched between two Al electrodes. These devices have unipolar switching behavior. The on and off voltages are about 2-3 and 0.5 V, respectively. The on/off current ratio of the device is 10(4)-10(9). Also, the write-erase cycle test was operated 27 times and the retention time was up to 6h. These characteristics were affected by several factors, such as the formation of current paths due to the redox behavior of PEDOT:PSS chain, the application of the compliance current and the existence of the native thin oxide layer, Al2O3, on top of the At bottom electrode. (C) 2009 The Japan Society of Applied Physics