Growth of homoepitaxial ZnO film on ZnO nanorods and light emitting diode applications
SCIE
SCOPUS
- Title
- Growth of homoepitaxial ZnO film on ZnO nanorods and light emitting diode applications
- Authors
- Park, SH; Kim, SH; Han, SW
- Date Issued
- 2007-02-07
- Publisher
- IOP SCIENCE
- Abstract
- Vertically aligned ZnO nanorod arrays with a diameter of 40-150 nm were fabricated on Al2O3 substrates with and without GaN interlayers, and consequently covered with a ZnO film in situ by a catalyst-free metal-organic vapour phase epitaxy method. X-ray diffraction and transmission electron microscopy measurements demonstrated that the ZnO film/nanorods hybrid structures had a well-ordered wurtzite structure with no lattice mismatch between the film and nanorods, and that the film was homoepitaxially grown horizontally as well as vertically on the pre-grown nanorods. From n-ZnO film/nanorods/p-GaN heterojunctions, we observed a blue light emission with a wavelength of about 440 nm.
- Keywords
- PHASE EPITAXIAL-GROWTH; THIN-FILMS; ART.; ELECTROLUMINESCENCE; HETEROSTRUCTURES; ORIENTATION; ARRAYS; LAYERS; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25969
- DOI
- 10.1088/0957-4484/18/5/055608
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 18, no. 5, 2007-02-07
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- There are no files associated with this item.
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