Hole-Induced Ferromagnetic Properties of Fe-Added ZnO Films
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- Title
- Hole-Induced Ferromagnetic Properties of Fe-Added ZnO Films
- Authors
- Seo, SY; Kwak, CH; Lee, YB; Kim, SH; Park, SH; Han, SW
- Date Issued
- 2008-07
- Publisher
- Korean Physical Society
- Abstract
- We investigated the structural and the magnetic properties of dilute magnetic semiconductor Zn0.96Fe0.04O films by using X-ray diffraction (XRD) and SQUID magnetization measurements. The films were synthesized on alpha-Al2O3 (0001) substrates by using a RF magnetron sputtering system with RF-powers of 40, 60 and 80 W. The XRD measurements revealed that the films had a wurtzite structure with their crystal (0001) directions oriented along the c-axis of the substrate. The best crystal quality was obtained at an RF-powder of 60 W. The SQUID magnetization measurements demonstrated that the films synthesized at 60 W were ferromagnetic at 10 K. An X-ray photoemission spectroscopy (XPS) analysis revealed an Fe chemical valence state of 2+ and energy dispersive spectroscopy measurements showed the presence of extra oxygen in the films. Our observations strongly suggest that Fe2+ ions are exactly substituted at the Zn2+ sites of the ZnO films and that the extra oxygen mediates the ferromagnetic properties of the films.
- Keywords
- ZnFeO; film; sputtering; ferromagnetic; DMS; MN-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; THIN-FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25964
- DOI
- 10.3938/jkps.53.249
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 53, no. 1, page. 249 - 252, 2008-07
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