p-Type Semiconducting GeSe Combs by a Vaporization-Condensation-Recrystallization (VCR) Process
SCIE
SCOPUS
- Title
- p-Type Semiconducting GeSe Combs by a Vaporization-Condensation-Recrystallization (VCR) Process
- Authors
- Yoon, SM; Song, HJ; Choi, HC
- Date Issued
- 2010-05-18
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Novel p-type semiconductors can be found in these extraordinary comb structures. The GeSe combs are selectively formed by a vaporization-condensation-recrystallization (VCR) process using bulk GeSe powder as the precursor source. They have a flat body plate part and extended wire finger parts, both of which have identical crystal structures. The GeSe comb field-effect transistor device displays both p-type semiconducting and photo-switching behavior.
- Keywords
- ELECTRICAL-PROPERTIES; SINGLE-CRYSTALS; ESHELBY TWIST; NANOWIRES; GROWTH
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25844
- DOI
- 10.1002/ADMA.200903719
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 22, no. 19, page. 2164 - +, 2010-05-18
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