A low voltage operational single-walled carbon nanotube thin-film transistor containing a high capacitance gate dielectric layer produced by layer-by-layer deposition
SCIE
SCOPUS
- Title
- A low voltage operational single-walled carbon nanotube thin-film transistor containing a high capacitance gate dielectric layer produced by layer-by-layer deposition
- Authors
- Shin, K; Jeon, H; Park, CE; Kim, Y; Cho, H; Lee, G; Han, JH
- Date Issued
- 2010-08
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- This paper presents the characteristics of a low voltage driven thin-film transistor (TFT) containing an active layer coated with a single-walled carbon nanotube (SWCNT) network. To make the high capacitance gate dielectrics layers, poly(ethylene imine) and the titanium oxide precursor, titanium(IV) bis(ammonium lactate) dihydroxide, were coated by a layer-by-layer deposition method. Through this process we obtained a capacitance of 118 nF/cm(2) and a total thickness of about 70 nm. The SWCNT active layer was deposited by spray-coating onto the layered-gate dielectric using a solution containing purified SWCNTs and a polystyrene additive. We used polystyrene in the coating solution to increase the dispersion of SWCNTs in the 1-methyl-2-pyrrolidone solution and decrease current leakage though the TFT channels. The resulting TFT showed a mobility of 6.7 cm(2)/V s, a threshold voltage of -0.88 V, and an on/off ratio of about 500 at operating voltages less than 2 V, which is suitable for the operation of various portable electronic devices. The output characteristics showed a good linear character and well-saturated behavior at elevated drain voltage. (C) 2010 Published by Elsevier B.V.
- Keywords
- SWCNT; TFT; Titanium oxide; Low voltage; Layer-by-layer; FIELD-EMISSION; PERFORMANCE; MORPHOLOGY; ROUGHNESS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25759
- DOI
- 10.1016/J.ORGEL.2010.05.012
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 11, no. 8, page. 1403 - 1407, 2010-08
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