Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles
SCIE
SCOPUS
- Title
- Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles
- Authors
- Myung, S; Park, J; Lee, H; Kim, KS; Hong, S
- Date Issued
- 2010-05-11
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles. [GRAPHICS] .
- Keywords
- SUSPENDED GRAPHENE; FILMS; GAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25743
- DOI
- 10.1002/ADMA.200903267
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 22, no. 18, page. 2045 - +, 2010-05-11
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- There are no files associated with this item.
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