Fabrication and Characteristics of an Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence
SCIE
SCOPUS
- Title
- Fabrication and Characteristics of an Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence
- Authors
- Kim, DS; Jeong, YT; Lyu, HK; Park, HJ; Kim, HS; Shin, JK; Choi, P; Lee, JH; Lim, G; Ishida, M
- Date Issued
- 2003-06
- Publisher
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Abstract
- We have fabricated an field effect transistor (FET)-type deoxyribonucleic acid (DNA) charge sensor which can detect the DNA sequence by sensing the variation of drain current due to DNA hybridization and investigated its electrical characteristics. It is fabricated as a PMOSFET-type because the DNA probe has a negative charge. An which has a chemical affinity with thiol was used as the gate metal in order to immobilize DNA. The operating principle is very similar to that of MOSFET. The gate potential is determined by the electric charge possessed by the DNA. The variation of the drain current with time was measured. The drain current increased when thiot DNA and target DNA were injected into the solution, because of the field effect due to the electrical charge of DNA molecules. Therefore it is confirmed that the DNA sequence can be detected by measuring the variation of the drain current due to the variation of DNA charge and it is concluded that the proposed FET-type DNA charge sensor might be useful for the implementation of the DNA chip.
- Keywords
- DNA chip; FET-type sensor; charge sensor; DNA sequence; DNA SENSOR; SINGLE; SPECTROMETRY; RECOGNITION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25224
- DOI
- 10.1143/JJAP.42.4111
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 42, no. 6B, page. 4111 - 4115, 2003-06
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.