Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel
SCIE
SCOPUS
- Title
- Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel
- Authors
- Lim, G; Park, CS; Lyu, HK; Kim, DS; Jeong, YT; Park, HJ; Kim, HS; Shin, JK; Choi, P; Lee, JH
- Date Issued
- 2003-06
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Abstract
- As micro-fluidic systems and biochemical detection systems are scaled to smaller dimensions, the realization of small and portable biochemical detection systems has become increasingly important. In this paper, we propose a 3-dimensional structure of a metal oxide semiconductor field-effect transistor(3-D MOSFET) using tetramethyl ammonium hydroxide (TMAH) anisotropic etching, which is a suitable device for combining with a micro-fluidic system. After fabricating a trapezoidal micro-fluidic channel, the 3-D MOSFET embodied in the convex corner of the micro-fluidic channel was fabricated. The length of the gate is about 20 mum and the width is about 9 mum. The depth and top width of the trapezoidal micro-fluidic channel are about 8 mum and 60 mum, respectively. The measured drain saturation current of the 3-D MOSFET was about -22 muA at VGs = -5 V and V-DS = -5 V, and the device characteristics exhibit a typical MOSFET behavior. Moreover, a gold layer was used for the MOSFET's gate metal to detect charged biochemical samples using the affinity between gold and thiol.
- Keywords
- 3-dimensional structure; convex corner; micro-fluidic channel; 3-D MOSFET
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25223
- DOI
- 10.1143/JJAP.42.4089
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 42, no. 6B, page. 4089 - 4092, 2003-06
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