Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition
- Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition
- Kim, WH; Lee, HBR; Heo, K; Lee, YK; Chung, TM; Kim, CG; Hong, S; Heo, J; Kim, H
- Date Issued
- ELECTROCHEMICAL SOC INC
- Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)(2)] as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 mu m width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3504196] All rights reserved.
- Article Type
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 158, no. 1, page. D1 - D5, 2011-01
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