Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities
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SCOPUS
- Title
- Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities
- Authors
- Yang, C; Kwack, Y; Kim, SH; An, TK; Hong, K; Nam, S; Park, M; Choi, WS; Park, CE
- Date Issued
- 2011-03
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We have fabricated high performance ambipolar thin-film transistors (TFTs) and an inverter based on organic-inorganic bilayer structures composed of an upper pentacene layer and a lower atomic-layer-deposited zinc oxide (ZnO) layer. The insertion of a dodecanoic acid (DA) self-assembled monolayer (SAM) into the interface between pentacene and ZnO results in an improvement in the morphology of the pentacene layer and in well-balanced ambipolarity with hole and electron mobilities of 0.34 and 0.38 cm(2)V (1)s (1), respectively. The ambipolar TFTs with DA-treated ZnO exhibit a hole to electron mobility ratio of approximately 0.90, which is higher by a factor of similar to 2.8 than that of ambipolar TFTs with untreated ZnO. We also tested the introduction of a perfluorooctyltriethoxysilane (PFOTES) SAM; the effects of the permanent dipole fields of the SAMs on the electrical and ambipolar characteristics of the hybrid TFTs were investigated. (C) 2010 Elsevier B.V. All rights reserved.
- Keywords
- Ambipolar thin-film transistor; Organic-inorganic hybrid transistor; Complementary-like inverter; Organic semiconductor; Oxide semiconductor; Pentacene; ZnO; FIELD-EFFECT TRANSISTORS; DIELECTRIC ROUGHNESS; PERFORMANCE; TRANSPORT; SURFACE; FUNCTIONALIZATION; SEMICONDUCTORS; FABRICATION; MORPHOLOGY; DEVICES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25065
- DOI
- 10.1016/J.ORGEL.2010.12.008
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 12, no. 3, page. 411 - 418, 2011-03
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