Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation
SCIE
SCOPUS
- Title
- Selective Synthesis of SiC and SiOx Nanowires by Direct Microwave Irradiation
- Authors
- Oh, E; Jung, SH; Lee, J; Cho, S; Kim, HJ; Lee, BR; Lee, KH; Song, KH; Choi, CH; Han, DS
- Date Issued
- 2011-02
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Abstract
- We report a facile and novel method for the selective growth of SiC and SiOx nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiOx or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiOx nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiOx nanowires synthesized by direct microwave irradiation. (C) 2011 The Japan Society of Applied Physics
- Keywords
- SILICON-CARBIDE NANOWIRES; THIN-FILMS; FABRICATION; DEPOSITION; GROWTH; NANOTUBES; CERAMICS; ARRAYS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24966
- DOI
- 10.1143/JJAP.50.025001
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 2, 2011-02
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- There are no files associated with this item.
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