Device characteristics of AlGaN/GaN MIS-HFET using Al2O3-HfO2 laminated high-k dielectric
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SCOPUS
- Title
- Device characteristics of AlGaN/GaN MIS-HFET using Al2O3-HfO2 laminated high-k dielectric
- Authors
- Park, KY; Cho, HI; Choi, HC; Bae, YH; Lee, CS; Lee, JL; Lee, JH
- Date Issued
- 2004-11-01
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- This is the first report on an AlGaN/GaN metal-insulator-semiconductor-heterostructure field-effect transistors (MIS-HFET) with an Al2O3-HfO2 laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al2O3-HfO2 laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2mum exhibited a maximum drain current of 500mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al2O3-HfO2 laminated dielectric effectively passivated the surface of the device.
- Keywords
- insulator; high-k dielectric; AlGaN/GaN HFET; MIS; Al2O3-HfO2 laminated dielectric; FIELD-EFFECT TRANSISTORS; MOBILITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24922
- DOI
- 10.1143/JJAP.43.L1433
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, vol. 43, no. 11A, page. L1433 - L1435, 2004-11-01
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