Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
SCIE
SCOPUS
- Title
- Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
- Authors
- Park, WI; Kim, JS; Yi, GC; Bae, MH; Lee, HJ
- Date Issued
- 2004-11-22
- Publisher
- AMER INST PHYSICS
- Abstract
- We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of similar to140 nS and a mobility of 75 cm(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10(4)-10(5), a high transconductance of 1.9 muS, and high electron mobility above 1000 cm(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24913
- DOI
- 10.1063/1.1821648
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 85, no. 21, page. 5052 - 5054, 2004-11-22
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