The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN
- The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN
- Baik, JM; Lee, JL
- Date Issued
- KOREAN INST METALS MATERIALS
- The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900degreesC. Synchrotron radiation photoemission spectroscopy revealed that the Ga-Mn magnetic phases contributing to ferromagnetic properties increased. Mn-N binary phases such as Mn6N2.58 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga-Mn magnetic phases.
- (Ga,Mn)N; ion implantation; ferromagnetic semiconductor; SRPES; MOLECULAR-BEAM-EPITAXY; ROOM-TEMPERATURE; THIN-FILMS; SEMICONDUCTORS; FERROMAGNETISM; (GA,MN)N; NITRIDE; DEFECTS; PHASE
- Article Type
- METALS AND MATERIALS INTERNATIONAL, vol. 10, no. 6, page. 555 - 558, 2004-12
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