Direct parameter extraction of SiGeHBTs for the VBIC bipolar compact model
SCIE
SCOPUS
- Title
- Direct parameter extraction of SiGeHBTs for the VBIC bipolar compact model
- Authors
- Lee, K; Choi, KS; Kook, SH; Cho, DH; Park, KW; Kim, B
- Date Issued
- 2005-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-pi model is developed. All the equivalent circuit elements are extracted analytically from S-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance (R-bi), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g(m)), dynamic base-emitter resistance (r(pi)), and base-emitter capacitance (C-pi) using the accurately extracted Rbi. The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs.
- Keywords
- De-embedding; equivalent circuit; heterojunction bipolar transistor (HBT); parameter extraction; SiGe; small-signal model; vertical bipolar intercompany (VBIC); SIGNAL EQUIVALENT-CIRCUIT; TRANSISTORS; PI
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24749
- DOI
- 10.1109/TED.2005.843
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 52, no. 3, page. 375 - 384, 2005-03
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