Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS
SCIE
SCOPUS
- Title
- Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS
- Authors
- Baik, JM; Kim, SU; Koo, YM; Kang, TW; Lee, JL
- Date Issued
- 2004-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The local structure of Mn impurities in a ferromagnetic (Ga, Mn)N semiconductor was investigated using extended X-ray absorption fine structure (EXAFS). The ferromagnetic signal increased and maintained up to room temperature as N ions were implanted into Mn-implanted GaN. The X-ray results showed that Mn ions occupied Ga sites to form (Ga, Mn) N semiconductor. The Mn concentration occupying Ga sites increased from 2.5 to 3.8% and the formation of Mn-N compounds such as Mn6N2.58 and Mn3N2 was prohibited by implanting N atoms. As a result, the N-vacancies reduced and net hole concentration increased, resulting in the enhancement of ferromagnetic property. (C) 2004 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24640
- DOI
- 10.1149/1.1813365
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 12, page. G313 - G315, 2004-01
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