Open Access System for Information Sharing

Login Library

 

Article
Cited 145 time in webofscience Cited 148 time in scopus
Metadata Downloads

Direct growth of core-shell SiC-SiO2 nanowires and field emission characteristics SCIE SCOPUS

Title
Direct growth of core-shell SiC-SiO2 nanowires and field emission characteristics
Authors
Ryu, YTak, YYong, K
Date Issued
2005-07
Publisher
IOP PUBLISHING LTD
Abstract
A simple, direct synthesis method was used to grow core-shell SiC-SiO2 nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO3 provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO2 sheaths at the growth temperature of 1000-1100 degrees C. Transmission electron microscopy showed that the SiC core was 15-25 nm in diameter and the SiO2 shell layer was an average of 20 nm in thickness. The thickness of the SiO2 shell layer could be controlled using hydrofluoric acid (HF) etching. Field emission results of core-shell SiC-SiO2 and bare SiC nanowires showed that the SiC nanowires coated with an optimum SiO2 thickness (10 nm) have a higher field emission current than the bare SiC nanowires.
Keywords
SILICON-CARBIDE NANOWIRES; ELECTRON-EMISSION; CARBON; SURFACE; NANOTUBES; NANORODS; SI
URI
https://oasis.postech.ac.kr/handle/2014.oak/24471
DOI
10.1088/0957-4484/16/7/009
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 16, no. 7, page. S370 - S374, 2005-07
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

용기중YONG, KIJUNG
Dept. of Chemical Enginrg
Read more

Views & Downloads

Browse