ZnSe-Si bi-coaxial nanowire heterostructures
SCIE
SCOPUS
- Title
- ZnSe-Si bi-coaxial nanowire heterostructures
- Authors
- Wang, CR; Wang, J; Li, Q; Yi, GC
- Date Issued
- 2005-09
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- We report on the fabrication, structural characterization, and luminescence properties od ZnSe/Si bi-coaxial nanowire hetero-structures. Uniform ZnSe/Si bi-coaxial nanowire heterostructures are grown on silicon substrate by simple one-step thermal evaporeation od ZnSe powder in the presence of hydrogen. Both ZnSe and silicon are single-crystalline in the bi-coaxial nanowire heterostructures, and there is a sharp interface along the nanowire axial direction. Furthermore, secondary nanostructures of either ZnSe nanobrushes od a SiOx sheath are also grown on the primary bi-coaxial nanowires are formed via a co-growth mechanism, that is, ZnSe terminates specific surfaces of silicon and leads to anisotropic, one-dimension silicon growth, which simultaneously serves as preferential nucleation sites for ZnSe, resulting in the bi-coaxial nanowire heterostructures. In addition, the optical properties od ZnSe/Si nanowires are investigated using low-temperature photoluminescence spectroscopy.
- Keywords
- MOLECULAR-BEAM EPITAXY; NANOROD HETEROSTRUCTURES; LASER-ABLATION; POLAR SURFACES; GROWTH; PHOTOLUMINESCENCE; SILICON; LUMINESCENCE; FABRICATION; DIODES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24403
- DOI
- 10.1002/ADFM.2004005
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 15, no. 9, page. 1471 - 1477, 2005-09
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