Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties
SCIE
SCOPUS
- Title
- Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties
- Authors
- Jeong, JS; Lee, JY; Cho, JH; Lee, CJ; An, SJ; Yi, GC; Gronsky, R
- Date Issued
- 2005-10
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Well-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work.
- Keywords
- PHYSICAL VAPOR-DEPOSITION; ZINC-OXIDE NANOWIRES; CATALYST-FREE GROWTH; PHOTOLUMINESCENCE; MECHANISM; MICROCRYSTALS; NANOBELTS; CRYSTALS; NANORODS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24335
- DOI
- 10.1088/0957-4484/16
- ISSN
- 0957-4484
- Article Type
- Article
- Citation
- NANOTECHNOLOGY, vol. 16, no. 10, page. 2455 - 2461, 2005-10
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- There are no files associated with this item.
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