Magnetocapacitance in a metal-oxide-metal junction system

Abstract

We investigated the effects of the bandwidth change on the magnetocapacitance (MC) of a metal-oxide-metal junction. The bandwidth change is induced by an electron-electron interaction on the metallic side of the capacitance system. We employed a generalized Hamiltonian incorporating the on-site and the inter-site Coulomb interactions, the exchange interaction, and pair-hopping and obtained a quadratic dependence of the MC on the magnetic field. We also found that the effects of the bandwidth change could be substantial near the phase boundary between the paramagnetic and the ferromagnetic phases.