Structural characterization of beta-SiC nanowires synthesized by direct heating method
SCIE
SCOPUS
- Title
- Structural characterization of beta-SiC nanowires synthesized by direct heating method
- Authors
- Baek, Y; Ryu, Y; Yong, K
- Date Issued
- 2006-07
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Crystal structure of beta-SiC nanowires was investigated using Raman spectroscopy, FT-IR, XRD, transmission electron microscopy and selected area electron diffraction. Cubic beta-SiC nanowires were synthesized by heating NiO catalyzed Si substrates with WO3 and graphite mixed powders in the growth temperature of 1000 - 1100 degrees C. HRTEM image showed atomic arrangements of the grown SiC nanowires with a main growth direction of [111]. Raman spectra showed two characteristic peaks at 796 cm(-1) and 968 cm(-1), which are corresponding to transversal optic mode and longitudinal optic mode of beta-SiC, respectively. Also, FT-IR absorption spectroscopy showed a SiC characteristic absorption band at similar to 792 cm(-1). (c) 2005 Elsevier B.V All rights reserved.
- Keywords
- SiC nanowires; direct heating method; solid-liquid-solid (SLS) mechanism; SILICON-CARBIDE NANOWIRES; EMISSION PROPERTIES; GROWTH; PHOTOLUMINESCENCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23966
- DOI
- 10.1016/j.msec.2005.09.083
- ISSN
- 0928-4931
- Article Type
- Article
- Citation
- MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, vol. 26, no. 5-7, page. 805 - 808, 2006-07
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