Effect of CsBr addition on the emission properties of TM3+ ion in Ge-Ga-S glass
SCIE
SCOPUS
- Title
- Effect of CsBr addition on the emission properties of TM3+ ion in Ge-Ga-S glass
- Authors
- Song, JH; Heo, J
- Date Issued
- 2006-09
- Publisher
- MATERIALS RESEARCH SOCIETY
- Abstract
- Absorption and emission properties of Tm3+ in (1-x) (Ge0.25Ga0.10S0.65)-xCsBr glass (x = 0.00-0.12) were investigated. Upon 10 mol % CsBr addition, the absorption cross sections of Tm3+ decreased accompanied by a large increase in the lifetime of the Tm3+:(3) H-4 level to 1.23 ms since Tm3+ ions were surrounded by the Br ions of [GaS3/2Br](-) units. As the concentration of Tm3+ increased, the H-3(4) level lifetime decreased due to cross relaxation (Tm3+:H-3(4),H-3(6)-->Tm3+:(3) F-4, F-3(4)). Temperature dependence of the H-3(4) level lifetime showed that cross relaxation in Tm3+ is a phonon-assisted energy transfer process. When Tm3+ were surrounded by Br ions, cross relaxation among Tm3+ was also suppressed clue to a decrease in the transition probability among Tm3+ energy levels, a decrease in phonon energy of the host glasses, as well as an increase in the number of phonons participating in the cross relaxation process. The potential of Tm3+-doped Ge-Ga-S-CsBr glasses for S-band fiber amplifiers is also discussed.
- Keywords
- 1.47 MU-M; FIBER AMPLIFIER; ENERGY-TRANSFER; EXCITED STATES; RELAXATION; MULTIPHONON; SPECTROSCOPY; 1.48-MU-M; CRYSTALS; TB3+
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23821
- DOI
- 10.1557/jmr.2006.0278
- ISSN
- 0884-2914
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS RESEARCH, vol. 21, no. 9, page. 2323 - 2330, 2006-09
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