Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics
SCIE
SCOPUS
- Title
- Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics
- Authors
- Yang, SY; Shin, K; Kim, SH; Jeon, H; Kang, JH; Yang, HC; Park, CE
- Date Issued
- 2006-10-19
- Publisher
- AMER CHEMICAL SOC
- Abstract
- The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.
- Keywords
- ATOMIC-FORCE MICROSCOPY; TRANSISTORS; TRANSPORT; MORPHOLOGY; MOBILITY; GROWTH; MONOLAYER; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23778
- DOI
- 10.1021/JP0646527
- ISSN
- 1520-6106
- Article Type
- Article
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY B, vol. 110, no. 41, page. 20302 - 20307, 2006-10-19
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