Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance
SCIE
SCOPUS
- Title
- Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance
- Authors
- Choi, K; Yu, DY; Lee, K; Kim, B; Zhu, H; Vargason, K; Kuo, JM; Pinsukanjana, P; Kao, YC
- Date Issued
- 2006-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- A new self-aligned emitter-base metallization (SAEBM) technique with wet etch is developed for high-speed heterojunction bipolar transistors (HBTs) by reducing extrinsic base resistance. After mesa etch of the base layer using a photo-resist mask, the base and emitter metals are evaporated simultaneously to reduce the emitter-base gap (S-EB) and base gap resistance (R-GAP). The InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) fabricated using the technique has a reduced RGAP, from 16.48 Omega to 4.62 Omega comparing with the DHBT fabricated by conventional self-aligned base metallization (SABM) process. Furthermore, we adopt a novel collector undercut technique using selective etching nature of InP and InGaAs to reduce collector-base capacitance (C-CB). Due to the reduced R-GAP, the maximum oscillation frequency (f(max)) for a 0.5 mu m-emitter HBT is improved from 205 GHz to 295 GHz, while the cutoff frequency (f(T)) is maintained at around 300 GHz. (c) 2006 Elsevier Ltd. All rights reserved.
- Keywords
- heterojunction bipolar transistors; self-aligned base metallization; base resistance; high-speed devices; HETEROJUNCTION BIPOLAR-TRANSISTORS; GHZ; F(MAX); SHBTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23722
- DOI
- 10.1016/j.sse.2006.07.017
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 50, no. 9-10, page. 1483 - 1488, 2006-09
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