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The resonant tunneling states in a quantum point contact SCIE SCOPUS KCI

Title
The resonant tunneling states in a quantum point contact
Authors
Chang, DILee, HJChung, Y
Date Issued
2006-12
Publisher
KOREAN PHYSICAL SOC
Abstract
The resonant tunneling states formed in a relatively long and narrow quantum point contact have been observed. The conductance measurement as a function of bias and gate voltage shows the coulomb diamond structure, which is a typical fingerprint of a quantum dot. From the excited-state spectrum, the average energy-level spacing between the quantized energy states was found to be around 1 meV. Also, the shape of the resonant tunneling peak matched that of a quantum dot. The results support the evidence that a quantum dot can be formed in a relatively narrow quantum point contact.
Keywords
quantum dot; quantum point contact; resonant tunneling state; excited state; DIMENSIONAL ELECTRON-GAS; DOTS; CONDUCTANCE; FIELD; LAYER
URI
https://oasis.postech.ac.kr/handle/2014.oak/23632
ISSN
0374-4884
Article Type
Article
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 49, page. 692 - 695, 2006-12
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