The resonant tunneling states in a quantum point contact
SCIE
SCOPUS
KCI
- Title
- The resonant tunneling states in a quantum point contact
- Authors
- Chang, DI; Lee, HJ; Chung, Y
- Date Issued
- 2006-12
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- The resonant tunneling states formed in a relatively long and narrow quantum point contact have been observed. The conductance measurement as a function of bias and gate voltage shows the coulomb diamond structure, which is a typical fingerprint of a quantum dot. From the excited-state spectrum, the average energy-level spacing between the quantized energy states was found to be around 1 meV. Also, the shape of the resonant tunneling peak matched that of a quantum dot. The results support the evidence that a quantum dot can be formed in a relatively narrow quantum point contact.
- Keywords
- quantum dot; quantum point contact; resonant tunneling state; excited state; DIMENSIONAL ELECTRON-GAS; DOTS; CONDUCTANCE; FIELD; LAYER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23632
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 49, page. 692 - 695, 2006-12
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