Quantum-structure-dependent excitonic carrier dynamics of InxGa1-xN/GaN multi-quantum-wells
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- Title
- Quantum-structure-dependent excitonic carrier dynamics of InxGa1-xN/GaN multi-quantum-wells
- Authors
- Hong, S; Kim, YS; Yoon, YJ; Park, JS; Kim, BK; Fomin, A; Lee, GH; Kim, JW; Cho, HK; Joo, T
- Date Issued
- 2007-06
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- The excitonic carrier dynamics taking place in InxGa1-xN/GaN multi-quantum-well systems have been studied by using low temperature picosecond-time-resolved photoluminescence (LT-TRPL), high resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), Dynamic time of flight secondary ion mass spectrometry (TOF-SIMS), and quantum mechanical simulation methods. Both time-integrated and time-resolved photoluminescence spectra of InxGa1-xN/GaN multi-quantum-wells with different well thicknesses and indium compositions were measured at 10 K. We assigned the natural radiative lifetime of each sample from the time-resolved PL. We observed that the natural radiative lifetime of In InxGa1-xN/GaN multi-quantum-wells depended strongly on the well thickness and the indium composition. To support the measured natural radiative lifetimes, we calculated the excitonic oscillator strengths of the InxGa1-xN/GaN multi-quantum-wells as functions of well thickness and indium composition by using a 2-D particle-in-a-box model. Values of the well thicknesses and indium compositions from the HR-TEM and XPS compositional depth profiling were used to achieve more realistic computational results and to corroborate the measured natural radiative lifetimes of InxGa1-xN/GaN multi-quantum wells.
- Keywords
- multi-quantum-wells; MQW; time-resolved photoluminescence; TRPL; excitonic oscillator strengths; InGaN; GaN; InN; nitride; semiconductor; light-emitting diode; LED; blue; green; WANNIER EXCITONS; EMISSION; ENERGY; SHIFT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23332
- DOI
- 10.3938/jkps.50.1636
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 50, no. 6, page. 1636 - 1642, 2007-06
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