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Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding

Title
Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding
Authors
Argunova, TSBelyakova, EIGrekhov, IVZabrodskii, AGKostina, LSSorokin, LMShmidt, NMYi, JMJung, JWJe, JHAbrosimov, NV
POSTECH Authors
Je, JH
Date Issued
Jan-2007
Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
Keywords
CHEMICAL VAPOR-DEPOSITION; BIPOLAR-TRANSISTORS; SILICON STRUCTURES; X-RAY; TOPOGRAPHY; CRYSTALS; SI1-XGEX; GROWTH
URI
http://oasis.postech.ac.kr/handle/2014.oak/23329
DOI
10.1134/S10637826070
ISSN
1063-7826
Article Type
Article
Citation
SEMICONDUCTORS, vol. 41, no. 6, page. 679 - 683, 2007-01
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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