Kinetic plasma simulations for three dielectric etchers
SCIE
SCOPUS
- Title
- Kinetic plasma simulations for three dielectric etchers
- Authors
- Hong, YJ; Ko, HS; Park, GY; Lee, JK
- Date Issued
- 2007-07
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Particle-in-cell Monte Carlo collision (PIC/MCC) modeling of dual frequency asymmetric capacitively coupled plasma (CCP) sources has been carried out. In particular, the following configurations have been modeled: 27/2 MHz system with an electrode separation of 2 cm, 60/2 MHz system with a gap of 4.5 cm, and 162/13.56 MHz system with a gap of 3.2 cm. It is found that both the ion flux to the electrode and the ion bombardment energy can be controlled independently in dual-frequency CCP (DF-CCP). Through kinetic modelings, many of the kinetic characteristics of the plasma discharge of three major dielectric etchers are compared. (C) 2007 Elsevier B.V All rights reserved.
- Keywords
- dual-frequency; capacitively coupled plasma; etcher; particle simulation; Monte Carlo collision; CAPACITIVELY COUPLED PLASMA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23279
- DOI
- 10.1016/j.cpc.2007.02.070
- ISSN
- 0010-4655
- Article Type
- Article
- Citation
- COMPUTER PHYSICS COMMUNICATIONS, vol. 177, no. 39815, page. 122 - 123, 2007-07
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- There are no files associated with this item.
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