Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns
SCIE
SCOPUS
- Title
- Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns
- Authors
- Hong, YJ; An, SJ; Jung, HS; Lee, CH; Yi, GC
- Date Issued
- 2007-12-17
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- ZnO nanorod arrays are selectively grown on 31 Substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods. [GRAPHICS]
- Keywords
- NANOWIRE ARRAYS; BOUND-EXCITON; BEAM EPITAXY; THIN-FILMS; AB-INITIO; CRYSTAL; HETEROSTRUCTURES; OPTOELECTRONICS; LITHOGRAPHY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22989
- DOI
- 10.1002/ADMA.2007012
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 19, no. 24, page. 4416 - +, 2007-12-17
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- There are no files associated with this item.
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