Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
SCIE
SCOPUS
- Title
- Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
- Authors
- Park, SJ; Kim, WH; Lee, HBR; Maeng, WJ; Kim, H
- Date Issued
- 2008-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using 02 and ammonia (NH3) plasma, respectively. RUCp2 and Ru(EtCp)(2) were used as Ru precursors. Pure and low resistivity (<20 mu Omega cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaNx, Si, and SiO2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal-oxide-semiconductor (MOS) capacitor composed of p-Si/ALD Ta2O5/ALD Ru (35 nm) was fabricated and C-V measurements were performed for as-deposited sample. Very small hysteresis of 20 mV was obtained, and effective work function difference to Si substrate was minimal as -0.03 V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5 V and flat band voltage (V-FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- Ru; atomic layer deposition; nucleation; roughness; C-V measurements; OXIDE THIN-FILMS; DIELECTRIC-CONSTANT; SR)TIO3 CAPACITORS; BOTTOM ELECTRODE; VAPOR-DEPOSITION; RU-ELECTRODES; TA2O5; OXYGEN; SIO2; (BA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22937
- DOI
- 10.1016/j.mee.2007.01.239
- ISSN
- 0167-9317
- Article Type
- Article
- Citation
- MICROELECTRONIC ENGINEERING, vol. 85, no. 1, page. 39 - 44, 2008-01
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