Linearity-optimized GaNHEMT Doherty amplifiers using derivative superposition technique for WCDMA applications
SCIE
SCOPUS
- Title
- Linearity-optimized GaNHEMT Doherty amplifiers using derivative superposition technique for WCDMA applications
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2008-03
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- Gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide-build code division multiple access (WCDMA) applications are represented. At a 7-dB back-off output power, the measured single-carrier WCDMA results show two-way and three-way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of -43.2 and -48.2 dBc at +/- 2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. (C) 2008 Wiley Periodicals, Inc.
- Keywords
- Doherty aniplifier; efficiency; gallium nitride; linearity; wide-band code division multiple access; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22930
- DOI
- 10.1002/MOP.23181
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 3, page. 701 - 705, 2008-03
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