Adsorption geometry of furan on Si(100)-2 x 1
SCIE
SCOPUS
- Title
- Adsorption geometry of furan on Si(100)-2 x 1
- Authors
- Lee, HK; Kim, KJ; Kang, TH; Chung, J; Kim, B
- Date Issued
- 2008-02-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We have investigated adsorption of furan on Si(100) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, O 1s spectra of furan on Si(100) show that furan is chemisorbed on Si(100)-2 x 1 through [4 + 2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of furan on Si(100). Since the pi(*) orbital of C = C bond showed a good angle dependence in carbon K-edge NEXAFS spectra, the angle 28 +/- 2 degrees determined from NEXAFS spectra appears to deviate from a theoretical value of 19 degrees for the [4 + 2] cycloaddition by 9 degrees, mostly due to the intrinsic defects on the Si(100)-2 x 1 substrate surface. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- furan; Si(100); adsorption; PES; NEXAFS; molecular orientation; organic-semiconductor interface; PHOTOELECTRON-SPECTROSCOPY; TEMPERATURE; MOLECULES; BEAMLINE; SURFACE; FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22875
- DOI
- 10.1016/j.susc.2007.12.019
- ISSN
- 0039-6028
- Article Type
- Article
- Citation
- SURFACE SCIENCE, vol. 602, no. 4, page. 914 - 918, 2008-02-15
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